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TOSHIBA

TPH2900ENH

Power MOSFET (N-ch 150V<VDSS≤250V)

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available
Assembly bases Malaysia

Package Information

Toshiba Package Name SOP Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
5.0×6.0×0.95
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 200 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 36 A
Power Dissipation PD 78 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 29
Input capacitance (Typ.) Ciss - 1700 pF
Total gate charge (Typ.) Qg VGS=10V 22 nC
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