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TOSHIBA

TO-3P(N)

TK60J25D

Power MOSFET (N-ch 150V<VDSS≤250V)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation π-MOSⅦ
Internal Connection Single
RoHS Compatible Product(s) (#) Available
Assembly bases Japan

Package Information

Toshiba Package Name TO-3P(N)
Package Image TO-3P(N)
JEITA SC-65
Pins 3
Mounting Through Hole
Package Dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 250 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 60 A
Power Dissipation PD 410 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 3.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 38
Input capacitance (Typ.) Ciss - 7000 pF
Total gate charge (Typ.) Qg VGS=10V 160 nC

 

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