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TOSHIBA

CST3C

SSM3J35CTC新产品

Small-signal MOSFET

产品概要

Application Scope Analog Switches
Polarity P-ch
Generation U-MOSⅦ
Internal Connection Single
RoHS Compatible Product(s) (#) Available
Assembly bases 泰国

封装类型

Toshiba Package Name CST3C
Package Image CST3C
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
0.8×0.6×0.38
Package Dimensions 查看
Land pattern dimensions 查看

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -20 V
Gate-Source voltage VGSS +/-10 V
Drain current ID -250 mA
Power Dissipation PD 0.5 W

产品特性

项目 符号 条件 数值 单位
Gate threshold voltage (Max) Vth - -1.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 1.4 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 2.1 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 2.9 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 4.0 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.2V 20 Ω
Input capacitance (Typ.) Ciss - 21 pF

 

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