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UDFN6B

SSM6K513NU新产品

Small Low ON resistance MOSFETs

产品概要

Application Scope Power Management Switches
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available
Assembly bases 泰国

封装类型

Toshiba Package Name UDFN6B
Package Image UDFN6B
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.0×0.75
Package Dimensions 查看
Land pattern dimensions 查看

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 15 A
Power Dissipation PD 1.25 W

产品特性

项目 符号 条件 数值 单位
Gate threshold voltage (Max) Vth - 2.1 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 12
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 8.9
Input capacitance (Typ.) Ciss - 1130 pF
Total gate charge (Typ.) Qg VGS=4.5V 7.5 nC

 

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