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TOSHIBA

UF6

SSM6L39TU

Small Low ON resistance MOSFETs

产品概要

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅢ / U-MOSⅢ
Internal Connection Independent
Component Product (Q1) SSM6N39TU
Component Product (Q2) SSM6P39TU
AEC-Q101 Conform(*)
RoHS Compatible Product(s) (#) Available
Assembly bases 日本 / 泰国

*: For detail information, please contact to our sales.

封装类型

Toshiba Package Name UF6
Package Image UF6
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions 查看
Land pattern dimensions 查看

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 20 V
Gate-Source voltage (Q1) VGSS +/-10 V
Drain current (Q1) ID 1.6 A
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS +/-8 V
Drain current (Q2) ID -1.5 A
Power Dissipation PD 0.5 W

产品特性

项目 符号 条件 数值 单位
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.5V 247
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 190
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 139
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4V 119
Input capacitance (Q1) (Typ.) Ciss - 260 pF
Total gate charge (Q1) (Typ.) Qg VGS=4V 7.5 nC
Gate threshold voltage (Q2) (Max) Vth - -1.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 213
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 294
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 430
Input capacitance (Q2) (Typ.) Ciss - 250 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4V 6.4 nC

 

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