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SSM5G11TU
Multi-chip discrete device (P-ch + SBD)
产品概要
| Generation | U-MOSⅢ |
|---|---|
| Internal Connection | Independent |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 |
封装类型
| Toshiba Package Name | UFV |
|---|---|
| Package Image | |
| Pins | 5 |
| Mounting | Surface Mount |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain current (Q1) | ID | -1.3 | A |
| Q2 Average Forward Current | IO | 700 | mA |
| Drain-Source voltage (Q1) | VDSS | -30 | V |
| Q2 Repetitive Peak Reverse Voltage | VRRM | 30 | V |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=-4V | 0.518 | Ω |