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DF2B12M4SL新产品
ESD protection diode (bi-directional type)
产品概要
| Internal Connection | Single |
|---|---|
| Number of Circuits | 1 |
| Number of Protected Lines | 1 |
| configuration | Bidirectional |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 泰国 |
封装类型
| package name (TOSHIBA) | SOD-962 (SL2) |
|---|---|
| Package Image | |
| package code | SOD-962 |
| Pins | 2 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
0.62×0.32×0.3 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Electrostatic discharge voltage(IEC61000-4-2) | VESD | +/-15 | kV |
| Peak pulse current (IEC61000-4-5) | IPP | 1 | A |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Working peak reverse voltage | VRWM | - | 11 | V |
| Total Capacitance (Max.) | CT | VR=0V f=1MHz |
0.4 | pF |
| Total Capacitance (Typ.) | CT | VR=0V f=1MHz |
0.2 | pF |
| Dynamic resistance | Rdyn | - | 0.65 | Ω |
| Reverse Breakdown Voltage (Min) | VBR | IBR=1mA | 11.5 | V |
| Reverse Breakdown Voltage (Typ.) | VBR | IBR=1mA | 13.5 | V |
| Reverse Current (Max) | IR | VRWM=11V | 0.1 | μA |