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TOSHIBA

SOT-23F

SSM3J378RNew Product

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches
Feature 1.5-volt gate drive voltage
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
AEC-Q101 Conform(*)
RoHS Compatible Product(s) (#) Available
Assembly bases Thailand

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-23F
Package Image SOT-23F
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.4×0.8
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -20 V
Gate-Source voltage VGSS +6/-8 V
Drain current ID -6.0 A
Power Dissipation PD 1.0 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -1.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 29.8
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 39.7
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 56
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 88.4
Input capacitance (Typ.) Ciss - 840 pF
Total gate charge (Typ.) Qg VGS=-4.5V 12.8 nC
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