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TOSHIBA

SOT-23F

SSM3K329R

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch
Generation U-MOSⅢ
Internal Connection Single
AEC-Q101 Conform(*)
RoHS Compatible Product(s) (#) Available
Assembly bases Japan / Thailand

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-23F
Package Image SOT-23F
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.4×0.8
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-12 V
Drain current ID 3.5 A
Power Dissipation PD 1.0 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 1.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 289
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 170
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 126
Input capacitance (Typ.) Ciss - 123 pF
Total gate charge (Typ.) Qg VGS=4V 1.5 nC
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