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SSM3K62TUNew Product
Small Low ON resistance MOSFETs
Description
| Application Scope | Power Management Switches / DC-DC Converters |
|---|---|
| Polarity | N-ch |
| Generation | U-MOSⅦ-H |
| Internal Connection | Single |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | Thailand |
*: For detail information, please contact to our sales.
Package Information
| Toshiba Package Name | UFM |
|---|---|
| Package Image | |
| Pins | 3 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.7 |
| Package Dimensions | View |
| Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | 20 | V |
| Gate-Source voltage | VGSS | +/-8 | V |
| Drain current | ID | 800 | mA |
| Power Dissipation | PD | 0.5 | W |
Electrical Characteristics
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.2V | 432 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 139 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 89 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 68 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 57 | mΩ |
| Input capacitance (Typ.) | Ciss | - | 177 | pF |
| Total gate charge (Typ.) | Qg | VGS=4.5V | 2.0 | nC |