Hot Keywords:
PRODUCTS CENTER
- Aluminum electrolytic capacitor
- Bolt type Ox horn type Lead type Patch type Unpolarized capacitor Horizontal capacitor Fixed product Solid state capacitance Solid-liquid mixed capacitor Ultracapacitor
- TOSHIBA
-
- MOSFET
- Bipolar Transistor/IGBT/IEGT
- diode
- Optical semiconductor
- Universal Linear IC
- Universal Logic IC
- sensor
- Micro controller
- Customized SoC
- IC for Wireless
- Vehicle components
- Image Recognition Processor Visconti™
- Special Image Processing IC for Vehicle Display
- Vehicle Audio IC
- Power Amplifier IC
- Vehicle Microcontroller
- simulation ASSP
- Vehicle Motor Driver
- Power Supply for Vehicle System
- Vehicle Communication RF-IC
- Special IC for Vehicle Communication Service (ETC/DSRC)
- vehicle MOSFET
- vehicle IPD
- Storage Solution of Automotive Information and Entertainment System
- Vehicle Bridge Chip
- Small packaged on-board components
- Vehicle optocoupler/optical relay
- Dedicated IC
- High frequency device
- Packaging and Packaging
- Product naming rules
SSM6K404TU
Small Low ON resistance MOSFETs
Description
| Application Scope | Power Management Switches / High-Speed Switching |
|---|---|
| Polarity | N-ch |
| Generation | U-MOSⅢ |
| Internal Connection | Single |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | Japan / Thailand |
*: For detail information, please contact to our sales.
Package Information
| Toshiba Package Name | UF6 |
|---|---|
| Package Image | |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.7 |
| Package Dimensions | View |
| Land pattern dimensions | View |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | 20 | V |
| Gate-Source voltage | VGSS | +/-10 | V |
| Drain current | ID | 3.0 | A |
| Power Dissipation | PD | 0.5 | W |
Electrical Characteristics
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.5V | 147 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=1.8V | 100 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=2.5V | 70 | mΩ |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4V | 55 | mΩ |
| Input capacitance (Typ.) | Ciss | - | 400 | pF |
| Total gate charge (Typ.) | Qg | VGS=4V | 5.9 | nC |