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TOSHIBA

US6

SSM6L35FU

Small Low ON resistance MOSFETs

Description

Application Scope High-Speed Switching / Analog Switches
Polarity N-ch + P-ch
Generation π-MOSⅥ / π-MOSⅥ
Internal Connection Independent
Component Product (Q1) SSM3K35MFV
Component Product (Q2) SSM3J35MFV
AEC-Q101 Conform(*)
RoHS Compatible Product(s) (#) Available
Assembly bases Japan / Thailand

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name US6
Package Image US6
JEITA SC-88
Package Code SOT-363
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.9
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 20 V
Gate-Source voltage (Q1) VGSS +/-10 V
Drain current (Q1) ID 180 mA
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS +/-10 V
Drain current (Q2) ID -100 mA
Power Dissipation PD 0.2 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.2V 20 Ω
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.5V 8.0 Ω
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 4.0 Ω
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4V 3.0 Ω
Input capacitance (Q1) (Typ.) Ciss - 9.5 pF
Gate threshold voltage (Q2) (Max) Vth - -1.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 8.0 Ω
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 11 Ω
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.5V 22 Ω
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.2V 44 Ω
Input capacitance (Q2) (Typ.) Ciss - 12.2 pF

 

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