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TOSHIBA
Product Naming Conventions
Starting with the new SBD series, the product naming conventions have been changed as shown below. Product names denote packaging, current rating, voltage rating and go on.

Product Naming Conventions


  1. Toshiba Schottky barrier diode/package style
    CB: CST2B Package
    CC: CST2C Package
    CE: ESC Package
    CM: M-Flat Package
    CR: S-Flat Package
    CT: CST2 Package
    CU: US-Flat/USC Package
    CV: UFV Package
  2. Number of pins / Internal Connection
    S: 2pin Single
    J: 5pin Parallel
  3. Average forward current,IF(AV)
    Example: 08: 0.8A, 10: 1.0A
  4. Product feature
    I: Low forward voltage & low leakage current (New SBD series)
    F: Low forward voltage
    R: Low leakage current
    S: Super low forward voltage
  1. Reverse voltage, VRRM
    Example: 30: 30 V
  2. Suffix that indicates an additional feature

Old Naming Conventions

Example of Schottky barrier diode

  1. DS stands for Toshiba Schottky barrier diode.
  2. Device feature
    This letter shows the feature of a device.
    R: Low leakage current type.
    F: Low forward voltage type.
  3. Current rating
    Examples: 07: 0.7 A, 10: 1 A
  1. Circuit configuration and number of pins
  2. Voltage rating
    Examples: 30: 30 V, 15: 15 V
  3. Revision
    The additional symbol for upgraded versions
  4. Package style
    This letter shows the package style.

New Naming Conventions

Example of Schottky barrier diode

  1. Package
    Examples: CE: ESC, CU: USC, CB: CST2B
  2. Pin count
    Example: S: 2-pin
  3. Current rating
    Example: 07: 0.7 A
  1. Device type
    Examples: F: Low-voltage, R: Low-leakage
  2. Voltage rating
    Example: 30: 30 V
  3. Revision or functional category (A to Z)
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