SiC肖特基势垒二极管
SiC肖特基势垒二极管（SBD）具有高反向电压额定值。除了提供具有较短反向恢复时间（trr）的SBD外，东芝还提供650V SBD，它具有结型肖特基势垒（JBS）结构，可提供开关电源所需的低泄漏电流（Ir）和高浪涌电流能力。这些器件有助于提高开关电源的效率。
- 650V
-
650V
详细信息
- Through Hole Type
-
Through Hole Type
详细信息
| Part Number |
Description |
Package |
View |
| TRS8A65F |
650 V/8 A SiC Schottky Barrier Diode, TO-220F-2L |
TO-220F-2L |
了解详情 |
| TRS6A65F |
650 V/6 A SiC Schottky Barrier Diode, TO-220F-2L |
TO-220F-2L |
了解详情 |
| TRS4A65F |
650 V/4 A SiC Schottky Barrier Diode, TO-220F-2L |
TO-220F-2L |
了解详情 |
| TRS24N65FB |
650 V/24 A SiC Schottky Barrier Diode, TO-247 |
TO-247 |
了解详情 |
| TRS20N65FB |
650 V/20 A SiC Schottky Barrier Diode, TO-247 |
TO-247 |
了解详情 |
| TRS16N65FB |
650 V/16 A SiC Schottky Barrier Diode, TO-247 |
TO-247 |
了解详情 |
| TRS12N65FB |
650 V/12 A SiC Schottky Barrier Diode, TO-247 |
TO-247 |
了解详情 |
| TRS12E65F |
650 V/12 A SiC Schottky Barrier Diode, TO-220-2L |
TO-220-2L |
了解详情 |
| TRS12A65F |
650 V/12 A SiC Schottky Barrier Diode, TO-220F-2L |
TO-220F-2L |
了解详情 |
| TRS10A65F |
650 V/10 A SiC Schottky Barrier Diode, TO-220F-2L |
TO-220F-2L |
了解详情 |
| TRS8E65F |
|
|
了解详情 |
| TRS6E65F |
|
|
了解详情 |
| TRS4E65F |
|
|
了解详情 |
| TRS3E65F |
|
|
了解详情 |
| TRS2E65F |
|
|
了解详情 |
| TRS10E65F |
|
|
了解详情 |
| TRS8E65F |
|
|
了解详情 |
| TRS6E65F |
|
|
了解详情 |
| TRS4E65F |
|
|
了解详情 |
| TRS3E65F |
|
|
了解详情 |
| TRS2E65F |
|
|
了解详情 |
| TRS10E65F |
|
|
了解详情 |
