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Power MOSFET (N-ch single 60V<VDSS≤150V)
Application Scope | DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers |
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Polarity | N-ch |
Generation | U-MOSⅧ-H |
Internal Connection | Single |
AEC-Q101 | Conform |
RoHS Compatible Product(s) (#) | Available |
Assembly bases | 日本 |
Toshiba Package Name | D2PAK+ |
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Package Image | ![]() |
Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
10.0×15.0×3.5 |
Package Dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage | VDSS | 100 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 60 | A |
Power Dissipation | PD | 205 | W |
项目 | 符号 | 条件 | 数值 | 单位 |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 3.5 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=6V | 9.55 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 6.31 | mΩ |
Input capacitance (Typ.) | Ciss | - | 4320 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 60 | nC |