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DF2S12P1CT
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DF2S12P1CT新产品
ESD protection diode (standard type, single)
产品概要
| Internal Connection | Single |
|---|---|
| Number of Circuits | 1 |
| Number of Protected Lines | 1 |
| configuration | Unidirectional |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 泰国 |
封装类型
| package name (TOSHIBA) | SOD-882 (CST2) |
|---|---|
| Package Image | |
| package code | SOD-882 |
| JEDEC | MO-236-EA |
| Pins | 2 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
1.0×0.6×0.38 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Electrostatic discharge voltage(IEC61000-4-2) | VESD | +/-30 | kV |
| Peak pulse current (IEC61000-4-5) | IPP | 7.5 | A |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Working peak reverse voltage | VRWM | - | 10 | V |
| Total Capacitance (Typ.) | CT | VR=0V f=1MHz |
42 | pF |
| Dynamic resistance | Rdyn | - | 0.58 | Ω |
| Reverse Breakdown Voltage (Min) | VBR | IBR=1mA | 10.5 | V |
| Reverse Breakdown Voltage (Typ.) | VBR | IBR=1mA | 12 | V |
| Reverse Current (Max) | IR | VRWM=10V | 0.1 | μA |
