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SSM6N39TU
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SSM6N39TU
Small-signal MOSFET 2 in 1
产品概要
| Application Scope | Power Management Switches / High-Speed Switching |
|---|---|
| Polarity | N-ch×2 |
| Generation | U-MOSⅢ |
| Internal Connection | Independent |
| Component Product (Q1) | SSM6N39TU |
| Component Product (Q2) | SSM6N39TU |
| AEC-Q101 | Conform(*) |
| RoHS Compatible Product(s) (#) | Available |
| Assembly bases | 日本 / 泰国 |
*: For detail information, please contact to our sales.
封装类型
| Toshiba Package Name | UF6 |
|---|---|
| Package Image | |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.7 |
| Package Dimensions | 查看 |
| Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1/Q2) | VDSS | 20 | V |
| Gate-Source voltage (Q1/Q2) | VGSS | +/-10 | V |
| Drain current (Q1/Q2) | ID | 1.6 | A |
| Power Dissipation | PD | 0.5 | W |
产品特性
| 项目 | 符号 | 条件 | 数值 | 单位 |
|---|---|---|---|---|
| Gate threshold voltage (Q1/Q2) (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.5V | 247 | mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.8V | 190 | mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=2.5V | 139 | mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4V | 119 | mΩ |
| Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 260 | pF |
| Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=4V | 7.5 | nC |
