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Intelligent power device (High side power-MOSFET driver with built-in charge pump)
Input / Output | H/H |
---|---|
Input / Output (Q1) | H/H |
Input / Output (Q2) | H/H |
Number of Circuits | 1 |
Protection Functions | Overcurrent |
AEC-Q100 | Conform |
RoHS Compatible Product(s) (#) | Available |
Assembly bases | 日本 |
Toshiba Package Name | PS-8 |
---|---|
Package Image | ![]() |
Pins | 8 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.9×2.8×0.8 |
Package Dimensions | 查看 |
Land pattern dimensions | 查看 |
Please refer to the link destination to check the detailed size.
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Output current | ISINK | 0.005 | A |
Power Dissipation (mounted on board) | PD | 0.7 | W |
Junction temperature | Tj | 150 | ℃ |
Operating Temperature (Max) | Topr | 125 | ℃ |
Operating Temperature (Min) | Topr | -40 | ℃ |
Power Supply Voltage | VDD | -0.3 to 24 | V |
Drain-Source voltage | VDSS | 32 | V |
项目 | 符号 | 条件 | 数值 | 单位 |
---|---|---|---|---|
Operating supply voltage (Max) | VDD(opr) | - | 18 | V |
Operating supply voltage (Min) | VDD(opr) | - | 5 | V |