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SSM3K131TU

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UFM

SSM3K131TU

Small Low ON resistance MOSFETs

Description

Application Scope High-Speed Switching
Polarity N-ch
Generation U-MOSⅣ
Internal Connection Single
AEC-Q101 Conform(*)
RoHS Compatible Product(s) (#) Available
Assembly bases Japan / Thailand

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name UFM
Package Image UFM
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 6.0 A
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 41.5
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 27.6
Input capacitance (Typ.) Ciss - 450 pF
Total gate charge (Typ.) Qg VGS=10V 10.1 nC
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