SiC Schottky Barrier Diodes

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1. Toshiba SiC Schottky Barrier Diodes
   
2. Current rating I_F(DC)
   Ex.) 10 : I_F(DC) = 10 A
3. Package
   A : TO-220F-2L
   E : TO-220-2L
   J : TO-3P(N)
   P : DPAK
   N : TO-247
   V : DFN8×8
4. Voltage rating V_RRM
   Display value×10 = V_RRM
   Ex.) 65 : V_RRM = “65”×10 = 650 V
5. Generation
   C, D : 1st Generation
   F      : 2nd Generation
6. Connection
   None : 1 chip
   B       : 2 chips & Center tap type