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Schottky barrier diode
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- Product Naming Conventions
- Starting with the new SBD series, the product naming conventions have been changed as shown below. Product names denote packaging, current rating, voltage rating and go on.
Product Naming Conventions
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Toshiba Schottky barrier diode/package style
CB： CST2B Package
CC： CST2C Package
CE： ESC Package
CM： M-Flat Package
CR： S-Flat Package
CT： CST2 Package
CU： US-Flat/USC Package
CV： UFV Package
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Number of pins / Internal Connection
S： 2pin Single
J： 5pin Parallel -
Average forward current,IF（AV）
Example： 08： 0.8A, 10： 1.0A -
Product feature
I： Low forward voltage & low leakage current (New SBD series)
F： Low forward voltage
R： Low leakage current
S： Super low forward voltage
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Reverse voltage, VRRM
Example： 30： 30 V - Suffix that indicates an additional feature
- Old Naming Conventions
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Example of Schottky barrier diode
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- DS stands for Toshiba Schottky barrier diode.
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Device feature
This letter shows the feature of a device.
R： Low leakage current type.
F： Low forward voltage type. -
Current rating
Examples： 07： 0.7 A, 10： 1 A
- Circuit configuration and number of pins
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Voltage rating
Examples： 30： 30 V, 15： 15 V -
Revision
The additional symbol for upgraded versions -
Package style
This letter shows the package style.
- New Naming Conventions
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Example of Schottky barrier diode
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Package
Examples： CE： ESC, CU： USC, CB： CST2B -
Pin count
Example： S： 2-pin -
Current rating
Example： 07： 0.7 A
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Device type
Examples： F： Low-voltage, R： Low-leakage -
Voltage rating
Example： 30： 30 V - Revision or functional category (A to Z)
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Package
